规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 44A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.012 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.2 A, 950 V, 1.1 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.8 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 55 V, 12 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 120 V, 160 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)VISHAY
场效应管, P通道, MOSFET, -40V, 40A
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
