规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0079 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.002 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 500 V, 0.043 ohm, 10 V, 5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 19A, SOIC-8TRA
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-220F-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 0.0037 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1mA
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 100 mohm, 10 V, 4.9 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 7.6A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
(EN)
