规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 36 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 40V, 190A, TO-220AB
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, D2-PAK
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0032 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 225 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 38 A, 80 V, 29 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 21A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42.6 A, 200 V, 55 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 6.4 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 40 V, 0.0063 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 40 V, 3.1 mohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 10A
(EN)
