规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 16A, TO-220
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 150 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 17 A, 30 V, 7.8 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-247AC
INFINEON
晶体管, MOSFET, N沟道, 57 A, 100 V, 25 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 100 V, 0.085 ohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.65 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.017 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 10 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 6.2 mohm, 10 V, 3 V
(EN)
