规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7.1 A, 600 V, 0.98 ohm, 10 V, 3.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 500 V, 235 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 42 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 120 V, 0.0098 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 57.7 A, 600 V, 0.067 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0225 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.003 ohm, 10 V, 3 V
(EN)
