规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0011 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00525 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0016 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 43.3 A, 700 V, 0.072 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 29A, TO-247AC-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.085 ohm, 10 V, 3.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 60 A, 25 V, 0.00646 ohm, 10 V, 1.76 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 15 A, 40 V, 0.008 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.00325 ohm, 10 V, 3.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 187W, TO-220-3
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 3 mohm, 10 V, 1.8 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
