规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.003 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 65 A, 650 V, 0.0354 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.155 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.0195 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, N Channel, 66 A, 600 V, 0.037 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 73A, TO-247AC-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 8230 μohm, 10 V, 2 V
(EN)
