规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, TO-220AB
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220AB-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 18.5 A, 600 V, 380 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00493 ohm, 10 V, 1.8 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.162 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
