规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 66A, TO-252
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 150 V, 80 mohm, 10 V, 4.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10.5 A, 800 V, 0.65 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19.4 A, 200 V, 0.12 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 130A, TO-220AB
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 30 V, 0.005 ohm, 10 V, 1.83 V
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 32 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 100 V, 38 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 19.3 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 77 A, 55 V, 10 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
