规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.002 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.8 A, 900 V, 2 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0078 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 71 A, 55 V, 13 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 830 μohm, 10 V, 1.1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.5 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 81 A, 60 V, 12 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 500V, 2.4A, TO-252-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 58 A, 800 V, 0.054 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)
