规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.0059 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 1.9A, 3-SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 44 A, 500 V, 0.11 ohm, 10 V, 3.15 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 1.3 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.1 A, 250 V, 0.45 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.052 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00112 ohm, 10 V, 1.7 V
VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0078 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
