规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150W, TO-220
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.044 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 135 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 60 V, 0.0011 ohm, 10 V, 2.9 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.13 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 140W, TO-262
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 525 V, 0.95 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.008 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 40 V, 0.0039 ohm, 10 V, 2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.00197 ohm, 10 V, 3 V
(EN)
