规格：电压 @ Rds测量 -10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双P沟道, 2W, 8-SOIC
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 42A, D2-PAK
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.003 ohm, -10 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 31A, D2-PAK
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, TO-220AB
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 5.4 mohm, -10 V, -1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
(EN)
INTERNATIONAL RECTIFIER
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.1 A, -80 V, 0.148 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -5.6A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -3 V
(EN)
