规格：电压 @ Rds测量 -10V,
VISHAY
场效应管, P通道, MOSFET, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 33.5mA, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5A, SOT-223, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -120mA, SOT-23, 整卷
(EN)VISHAY
场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -30 V, 0.165 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -3.05 A, -30 V, 0.063 ohm, -10 V, -1.7 V
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -700mA, -150V, 8-SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3
(EN)INTERNATIONAL RECTIFIER
场效应管, 双MOSFET, 双P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.105OHM, -3.4A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV
(EN)
