规格：电压 @ Rds测量 -10V,
INFINEON
场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V
(EN)
VISHAY
MOSFET, P CHANNEL, -50V, -9.9A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 18A, D-PAK
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, P通道, MOSFET, -200V, 6.5A, D2-PAK
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.08 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 0.069Ω, 3A, SOIC-8
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.0167 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.036 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.036 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -14 A, -30 V, 0.005 ohm, -10 V, -2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -20 V, 250 mohm, -10 V, -3 V
(EN)ROHM
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.0193 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.07 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1A, SOT-23
(EN)
