规格：电压 @ Rds测量 -10V,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -60 V, 0.079 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 150 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.056 ohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 6 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, SOIC
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0036 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -150 V, 0.91 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -370 mA, -60 V, 3.1 ohm, -10 V, -2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.295 ohm, -10 V, -4 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -16A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.13 ohm, -10 V, -4 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
(EN)
