规格：电压 @ Rds测量 -10V,
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V
(EN)
VISHAY
MOSFET, P-CH, -40V, -30A, POWERPAK SO
(EN)
INFINEON
晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.8 A, -200 V, 2.06 ohm, -10 V, -5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.9 A, -30 V, 58 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 30V V(BR)DSS
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -2.7A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -60 V, 105 mohm, -10 V, -1.6 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, D-PAK
(EN)
