规格：电压 @ Rds测量 -10V,
INFINEON
双路场效应管, MOSFET, 双P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 0.01 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.44 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 9.9 A, -40 V, 60 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 70 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -2.2A, -150V, 8-SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.11 ohm, -10 V, -4 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -12A, SOIC
(EN)
