规格：电压 @ Rds测量 8V,
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.7A, MICROFET 2X2
(EN)VISHAY
场效应管, MOSFET, P沟道, -8V, 4.1A, TO-236
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 3.8 mohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 8A, TSOP, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 50A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 6A, 1206
(EN)
