规格：MSL MSL 1 - Unlimited,
VISHAY
场效应管, P通道, MOSFET, -100V, 6.8A, D2-PAKT
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)
VISHAY
MOSFET, N CHANNEL, 500V, 2.4A, TO-252-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC
(EN)
NTE ELECTRONICS
小信号双极性晶体管
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 1.9A, 3-SOT-23
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 30V, SC-88
(EN)
VISHAY
晶体管, P沟道
(EN)
NTE ELECTRONICS
场效应管, JFET, N沟道, -30V, TO-92
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -8V, SC-88
(EN)VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, HFE 63
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-247AC-3
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
ON SEMICONDUCTOR
晶闸管, SCR, 25A, 100V, TO-220AB, 25A, 100V
(EN)
TEXAS INSTRUMENTS
功率晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, TO-263-3
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
(EN)
NXP
开关晶体管, NPN, 40V, 600mA, 3-SOT-89
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
TEXAS INSTRUMENTS
功率外设驱动器
(EN)
