STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 40 A, 600 V, 165 W, 600 V, TO-247AB, 3 引脚

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm

INFINEON

单晶体管, IGBT, 15 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 引脚

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 900V, 51A

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 24 A, 1 kV, 390 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V

LITTELFUSE

双向晶闸管

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.108 ohm, 10 V, 2 V

INFINEON

单晶体管, IGBT, 240 A, 1.7 V, 750 W, 600 V, TO-274AA, 3 引脚

WEEN SEMICONDUCTOR

三端双向可控硅, 800 V, 10 mA, 5 W, 1.5 V, TO-220F, 15.4 A

ON SEMICONDUCTOR

单晶体管 双极, NPN, 200 V, 8 MHz, 250 W, 40 A, 10 hFE

SOLID STATE

达林顿晶体管, NPN, 450V, 20A, TO-3

ON SEMICONDUCTOR

单晶体管 双极, NPN, 200 V, 3 MHz, 150 W, 15 A, 400 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 7 A, 600 V, 950 mohm, 10 V, 3.75 V

IXYS RF

晶体管, 射频FET, 200 V, 25 A, 590 W, 100 MHz, DE-275

INFINEON

晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, NPN, 45 V, 250 MHz, 350 mW, 100 mA, 310 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 40A

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V