SOLID STATE

达林顿晶体管, NPN, 10A, TO-220

NXP

RF WIDEBAND TRANSISTOR, NPN, 12V, 6GHZ, 4-SOT-143B

INFINEON

功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 引脚

NTE ELECTRONICS

双向晶闸管, 600V, 8A, TO-220

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

STMICROELECTRONICS

晶闸管, 400 V, 1.5 mA, 1.8 A, 2 A, TO-220AB, 3 引脚

STMICROELECTRONICS

双向晶闸管, TO247

NTE ELECTRONICS

晶闸管, 40A

SEMELAB

晶体管, 射频FET, 40 V, 2 A, 17.5 W, 1 MHz, 2 GHz, SOIC

INFINEON

单晶体管, IGBT, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 引脚

ROHM

双路场效应管, MOSFET, 双P沟道, -5.5 A, -12 V, 0.015 ohm, -4.5 V, -1 V

LITTELFUSE

晶闸管, 600 V, 35 mA, 25 A, 25 A, TO-220AB, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.2 ohm, 10 V, 3.75 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 25 mA, 1 W, 1.3 V, TO-220AB, 90 A

STMICROELECTRONICS

三端双向可控硅, 600 V, 35 mA, 1 W, 1 V, TO-263, 120 A

SEMELAB

晶体管, MOSFET, N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.4 V

INFINEON

晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 60 V, 6.5 mohm, 10 V, 3 V

WEEN SEMICONDUCTOR

三端双向可控硅, 600 V, 5 W, 1.5 V, TO-220, 65 A

IXYS SEMICONDUCTOR

晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V

NTE ELECTRONICS

双向晶闸管, 200V V(DRM), 40A I(T)RMS

STMICROELECTRONICS

三端双向可控硅, 600 V, 1 W, 1 V, 160 A

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 60 A, 800 V, 140 mohm, 10 V, 5 V