规格：MSL -,
ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 327 A, 40 V, 0.0014 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管 双极预偏置/数字, 数字式, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm
(EN)ROHM
晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 22 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 300 V, 26 mohm, 10 V, 5 V
(EN)
