MICROCHIP

晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 40 V, 9 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 引脚

SOLID STATE

达林顿晶体管, NPN, 20A, TO-3

NTE ELECTRONICS

达林顿双极性晶体管

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 10 mA, 1 W, 1.3 V, TO-220AB, 60 A

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm

INFINEON

晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V

SOLID STATE

达林顿晶体管, NPN, 30A, TO-3

ON SEMICONDUCTOR

单晶体管, IGBT, 120 A, 2 V, 298 W, 600 V, TO-247, 3 引脚

ROHM

晶体管, MOSFET, N沟道, 7 A, 30 V, 0.02 ohm, 10 V, 2.5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 2 MHz, 300 mW, 50 A, 15 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE

FUJI ELECTRIC

单晶体管, IGBT, 28 A, 1.85 V, 155 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 75 A, 55 V, 0.006 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 75 A, 2 V, 428 W, 600 V, TO-247, 3 引脚