INFINEON

晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V

INFINEON

单晶体管, IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 12 A, 900 V, 900 mohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 150 A, 300 V, 0.019 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 90 A, 200 V, 23 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V

NTE ELECTRONICS

整流桥

LITTELFUSE

三端双向可控硅, 600 V, 35 mA, 500 mW, 1.3 V, TO-220AB, 83 A

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 1 W, 1 V, 160 A

VISHAY

晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V

MULTICOMP

双极性晶体管, NPN, 80V, TO-3

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 3 V

INFINEON

MOSFET, N-CH, 75V, 183A, TO-220AB-3

INFINEON

晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0019 ohm, 10 V, 1.7 V

STMICROELECTRONICS

单晶体管, IGBT, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 32 A, 1.2 kV, 350 mohm, 10 V, 5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V

SOLID STATE

晶体管, JFET, JFET, -40 V, 20 mA, 100 mA, -6 V, TO-18, JFET

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE

INFINEON

单晶体管, IGBT, 60 A, 1.68 V, 160 W, 600 V, TO-220AB, 3 引脚