
NTE ELECTRONICS
双极性晶体管

STMICROELECTRONICS
晶体管, 射频FET, 125 V, 20 A, 389 W, 230 MHz, M174

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V

STMICROELECTRONICS
晶闸管, 600 V, 50 μA, 900 mA, 4 A, TO-202, 3 引脚

STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V

STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.3 V, TO-220AB, 100 A

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V

NTE ELECTRONICS
双极性晶体管

STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V

SOLID STATE
晶体管, JFET, JFET, -30 V, 50 mA, 50 mA, -10 V, TO-18, JFET

INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V

INFINEON
单晶体管, IGBT, 140 A, 1.7 V, 455 W, 650 V, TO-247AC, 3 引脚

ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 引脚

NTE ELECTRONICS
晶体管套件