INFINEON

功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V

NTE ELECTRONICS

晶体管, 双极性, PNP, -45V, -10A, TO

INFINEON

晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 52 A, 900 V, 160 mohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 63 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 引脚

NTE ELECTRONICS

场效应管, MOSFET, N沟道, 60V V(BR)DSS

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V

STMICROELECTRONICS

三端双向可控硅, 700 V, 35 mA, 1 W, 1.5 V, 120 A

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V

SOLID STATE

双极晶体管阵列, NPN, 60 V, 500 mW, 30 mA, 300 hFE, TO-206AF

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 6 MHz, 115 W, 15 A, 2.5 hFE

VISHAY

功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管, IGBT, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 90 A, 2 V, 300 W, 600 V, TO-247, 3 引脚

NTE ELECTRONICS

达林顿双极性晶体管

NTE ELECTRONICS

双极性晶体管, PNP, -30V TO-92

NTE ELECTRONICS

双向晶闸管, 600V, 40A, TO-218