IXYS SEMICONDUCTOR

单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

ON SEMICONDUCTOR

晶体管, 带电阻, 50V, 10K/10KΩ, SOT-363

NTE ELECTRONICS

可控硅, 200V, 55A, TO-220

INFINEON

功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V

STMICROELECTRONICS

单晶体管, IGBT, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 引脚

NTE ELECTRONICS

双向晶闸管, 400V, 800mA, TO-92

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V

SOLID STATE

单晶体管 双极, NPN, 100 V, 200 W, 20 A, 1000 hFE

NTE ELECTRONICS

双极性晶体管

MULTICOMP

单晶体管 双极, PNP, -80 V, 3 MHz, 30 W, -1 A, 40 hFE

NXP

RF WIDEBAND TRANSISTOR, PNP, -15V, 5GHZ,

FUJI ELECTRIC

单晶体管, IGBT, 53 A, 1.8 V, 260 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, IGBT

IXYS SEMICONDUCTOR

晶体管, MOSFET, LINEAR L2?, N沟道, 53 A, 500 V, 100 mohm, 10 V, 2.5 V

NTE ELECTRONICS

晶体管, NPN, 200V, 15A, TO-3P-3

NTE ELECTRONICS

双向晶闸管, 400V, 40A, TO-48

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

NEXPERIA

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.35 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 56 A, 75 V, 7.34 mohm, 10 V, 4 V