INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道, -200V, 6.5A, TO-204AA

NXP

射频晶体管, LDMOS, 100W, NI-780

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V

NTE ELECTRONICS

达林顿晶体管, PNP, -120V, TO-3

NTE ELECTRONICS

场效应管, MOSFET

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 1 W, 1 V, 100 A

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 80 V, 4 MHz, 200 W, 25 A, 4 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 46 A, 300 V, 49 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管, IGBT, 30 A, 2.1 V, 278 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 2 V, 250 W, 600 V, TO-247, 3 引脚

NTE ELECTRONICS

芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3

NTE ELECTRONICS

射频场效应管, 双栅极, N沟道, 20V, TO72

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V

MULTICOMP

场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23

INFINEON

单晶体管, IGBT, 52 A, 1.84 V, 104 W, 600 V, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 15 A, 1 kV, 700 mohm, 10 V, 4.5 V

MULTICOMP

单晶体管 双极, PNP, -70 V, 10 MHz, 40 W, -7 A, 150 hFE

VISHAY

场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A

VISHAY

晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 850 mV

WEEN SEMICONDUCTOR

晶闸管, 400 V, 200 μA, 0.5 A, 0.8 A, TO-92, 3 引脚