VISHAY

场效应管, MOSFET, N沟道, 500V, 19A, TO-220FP-3

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 600V 22A TO-220

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 150V, 27A, TO-220AB

ON SEMICONDUCTOR

RF TRANSISTOR, NPN, 30V, 100MHZ, SOT-323

INFINEON

场效应管, MOSFET, N沟道, 40V, 120A, TO-220AB-3

NXP

射频宽带晶体管, NPN, 5V, 5GHZ, 3-SOT-23

VISHAY

功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 60V, 48A TO-220AB

STMICROELECTRONICS

单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV

ON SEMICONDUCTOR

双极晶体管

STMICROELECTRONICS

单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 引脚

ON SEMICONDUCTOR

双极晶体管

INTERNATIONAL RECTIFIER

INFINEON

晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.34 ohm, 13 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V

ON SEMICONDUCTOR

双极性晶体管, PNP -60V TO-220

VISHAY

场效应管, MOSFET, N沟道, 36W, TO-220AB

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V