VISHAY

晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 45A

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, N通道, 80 A, 2.3 V, 428 W, 1.2 kV, TO-247, 3 引脚

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 车用, 55V, 49A, TO-220AB

INFINEON

单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚

ON SEMICONDUCTOR

双向晶闸管

VISHAY

场效应管, MOSFET, N沟道

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 53A TO-247AC

NXP

二极管, 射频/PIN, 双系列, 0.85 ohm, 60 V, SOT-23, 3引脚, 0.325 pF

INFINEON

单晶体管, IGBT, 8 A, 1.6 V, 31.2 W, 650 V, TO-220, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 76 A, 650 V, 0.036 ohm, 10 V, 5 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 58A, 100V

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V

ON SEMICONDUCTOR

达林顿双极晶体管

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 150V, 43A, TO-220AB

INFINEON

单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 30V, 116A, TO-220AB

ROHM

单晶体管 双极, PNP, -30 V, 320 MHz, 200 mW, -1 A, 270 hFE

STMICROELECTRONICS

单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-3P, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 14 A, 500 V, 340 mohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.32 ohm, 10 V, 2.5 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.3 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, P沟道

VISHAY

晶体管, MOSFET, 沟槽式FET, N沟道, 19 A, 20 V, 0.0022 ohm, 4.5 V, 1.8 V