VISHAY

晶体管, MOSFET, 沟槽式FET, N沟道, 50 A, 40 V, 0.0036 ohm, 10 V, 2.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, AEC-Q101, N沟道, 63.3 A, 650 V, 0.043 ohm, 10 V, 4 V

LITTELFUSE

晶闸管, 400V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0117 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 65A, TO-220

LITTELFUSE

晶闸管, SCR, 40A, 400V, TO-220 非隔离型

INFINEON

功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.168 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

INFINEON

晶体管, MOSFET, N沟道, 100 A, 100 V, 3.5 mohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 70A

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 55V, 14A TO-220FP

INTERNATIONAL RECTIFIER

双极性晶体管, N 通道, 600V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.29 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 96 A, 650 V, 0.019 ohm, 10 V, 4 V

INFINEON

晶体管, IGBT, 600V

ON SEMICONDUCTOR/FAIRCHILD

达林顿双极性晶体管

VISHAY

晶体管, MOSFET, N沟道, 28 A, 100 V, 0.077 ohm, 5 V, 2 V

INFINEON

单晶体管, IGBT, 80 A, 1.85 V, 428 W, 600 V, TO-247, 3 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 55 V, 3.3 mohm, 10 V, 2.3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V

INFINEON

单晶体管, IGBT, 20 A, 360 V, 34 W, 360 V, TO-220FP, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚

INFINEON

场效应管, MOSFET, N沟道, 40V, 195A, TO-263AB-3

INTERNATIONAL RECTIFIER

晶体管, IGBT, 单路, 1.65V, 47A, TO-247AC