
NTE ELECTRONICS
闸流管

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V

GENESIC SEMICONDUCTOR
单晶体管, IGBT, 硅, 35 A, 1.2 kV, TO-247, 3 引脚

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 42 A, 600 V, 0.185 ohm, 10 V, 4.5 V

NTE ELECTRONICS
晶体管, NPN, TO-3封装

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V

IXYS SEMICONDUCTOR
单晶体管, IGBT, 43 A, 2.1 V, 150 W, 1.2 kV, TO-247AD, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.028 ohm, 10 V, 2 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V

VISHAY
场效应管, MOSFET, N沟道

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.049 ohm, 10 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, 6.6 A, 650 V, 0.59 ohm, 10 V, 4 V

STMICROELECTRONICS
双极晶体管阵列, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC

ON SEMICONDUCTOR
三端双向可控硅开关