INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 30A TO-220AB

DIODES INC.

双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V

WEEN SEMICONDUCTOR

三端双向可控硅, 800 V, 7 mA, 2 W, 1.3 V, TO-92, 8.5 A

TEXAS INSTRUMENTS

双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 100 V, 70 W, 8 A, 1000 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 65 A, 60 V, 16 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -120 V, 120 MHz, 900 mW, -800 mA, 120 hFE

ROHM

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V

INFINEON

晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V

LITTELFUSE

三端双向可控硅, 600 V, 5 mA, 10 W, 2.5 V, TO-225, 30 A

VISHAY

场效应管, MOSFET, N沟道, 20V, 25A, SC70-6

ROHM

晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 310 mW, 500 mA, 100 hFE

STMICROELECTRONICS

三端双向可控硅, 600 V, 3 mA, 1 W, 1.3 V, TO-92, 8 A

INFINEON

功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 80 V, 3 MHz, 30 W, 3 A, 3 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V

MULTICOMP

晶体管, 单结(UJT), 2 A, 1 μA, 10 mA, TO-18, 3引脚, 125 °C

DIODES INC.

单晶体管 双极, NPN, 65 V, 300 MHz, 200 mW, 100 mA, 290 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB