规格：MSL -,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.33 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 200 V, 35 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0082 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 250 V, 60 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, UNITFET, 500V, 4.2A, TO-220F
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 40 A, 600 V, 165 W, 600 V, TO-247AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 80 A, 600 V, 290 W, 600 V, TO-247AD, 3 引脚
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 48 A, 1.85 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 55 A, 1.6 V, 230 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 64 A, 1.5 V, 230 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 70 A, 1.8 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 63 A, 1.85 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 85 A, 1.6 V, 360 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.034 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 200 V, 32 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 9.3 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
(EN)
