
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV

TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1 ohm, 10 V, 2 V

VISHAY
单晶体管, IGBT, 84 A, 3.22 V, 431 W, 1.2 kV, SOT-227, 4 引脚

VISHAY
单晶体管, IGBT, 84 A, 3.22 V, 431 W, 1.2 kV, SOT-227, 4 引脚

VISHAY
单晶体管, IGBT, 111 A, 2.23 V, 447 W, 600 V, SOT-227, 4 引脚

VISHAY
单晶体管, IGBT, 258 A, 1.73 V, 893 W, 1.2 kV, SOT-227, 4 引脚

ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.7 kV, 8.2 ohm, 10 V, 4 V