STMICROELECTRONICS

晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 引脚

MULTICOMP

单晶体管 双极, NPN, 65 V, 60 MHz, 800 mW, 1 A, 40 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 100 V, 4850 μohm, 5 V, 1.7 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 5 mA, 1 W, 1.3 V, TO-220AB, 30 A

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 420 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 23A

ROHM

晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V

MULTICOMP

单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE

NEXPERIA

单晶体管 双极, PNP, -60 V, 185 MHz, 250 mW, -1 A, 350 hFE

STMICROELECTRONICS

单晶体管, IGBT, 6 A, 2.5 V, 20 W, 600 V, TO-220FP, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR

射频双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 100 MHz, 625 mW, 800 mA, 60 hFE

VISHAY

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V

STMICROELECTRONICS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP

LITTELFUSE

晶闸管, 600 V, 200 μA, 2.55 A, 4 A, TO-225AA, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V

TOSHIBA

晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 12 A, 550 V, 0.3 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, 160W, 3-TO-220

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, 60 V, 40 W, 4 A, 750 hFE

VISHAY

晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V

VISHAY

晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V