
VISHAY
场效应管, MOSFET, N沟道

NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -1 A, 15 hFE

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V

STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 120 A

VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -300 V, 50 MHz, 1.5 W, -500 mA, 25 hFE

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 83 W, -15 A, 35 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.088 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 12.5 W, 1.5 A, 40 hFE

STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚