
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, RD-91, 250 A

INFINEON
功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.017 ohm, 10 V, 3.5 V

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 80 V, 50 MHz, 70 W, 10 A, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.0363 ohm, 10 V, 3.9 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.36 ohm, 10 V, 5 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.005 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 300 V, 150 MHz, 7 W, 100 mA, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 40 MHz, 60 W, -10 A, 60 hFE

INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V