LITTELFUSE

晶闸管, SCR, 8A, 800V, TO-220 隔离型

LITTELFUSE

晶闸管, 800 V, 35 mA, 16 A, 25 A, TO-220AB, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.83 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 70 V, 4 MHz, 40 W, 7 A, 2.3 hFE

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3

INFINEON

晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0065 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 10.1 A, 650 V, 0.54 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 18 A, 600 V, 0.168 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB

STMICROELECTRONICS

单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V

INFINEON

功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

LITTELFUSE

可控硅晶闸管, 16A, 600V, TO-220

MICROCHIP

晶体管, MOSFET, N沟道, 136 mA, 450 V, 20 ohm, 0 V

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV

VISHAY

晶闸管, 1.6 kV, 150 mA, 35 A, 55 A, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, 8 A, 1.65 V, 70 W, 650 V, TO-220, 3 引脚

VISHAY

功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 600V, 47A, TO247AC-3

STMICROELECTRONICS

三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, 80 A

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V