FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

STMICROELECTRONICS

单晶体管, IGBT, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 引脚

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

LITTELFUSE

晶闸管, 800 V, 20 mA, 7.8 A, 12 A, TO-220AB, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 120 A, 600 V, 600 W, 600 V, TO-247AB, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 90 A, 60 V, 0.003 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.155 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.0195 ohm, 10 V, 4.5 V

VISHAY

晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V

MULTICOMP

单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 90 V, 85 W, 20 A

LITTELFUSE

晶闸管, 800 V, 200 μA, 8 A, TO-220AB, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, N Channel, 66 A, 600 V, 0.037 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, 通用, NPN, 100 V, 125 W, 25 A, 25 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V