MULTICOMP

单晶体管 双极, PNP, -40 V, 2 MHz, 40 W, 1 A, 100 hFE

MULTICOMP

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -2.1 A, -500 V, 3.9 ohm, -10 V, -5 V

INFINEON

单晶体管, IGBT, 33 A, 2.05 V, 210 W, 1.2 kV, TO-247AC, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 250 A

VISHAY

晶体管, MOSFET, N沟道, 36 A, 500 V, 130 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 引脚

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.3 ohm, 10 V, 4 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 100 A

INFINEON

晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0036 ohm, 10 V, 2.8 V

INFINEON

单晶体管, IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 引脚

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 30 W, 1 A, 75 hFE

STMICROELECTRONICS

晶体管, 射频FET, 80 V, 9 A, 108 W, 1 GHz, M250

MULTICOMP

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 110 hFE

VISHAY

晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, 达林顿, PNP, -60 V, 50 W, -2 A, 1000 hFE

INFINEON

晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 3 V

LITTELFUSE

三端双向可控硅, 600 V, 8 A, TO-220AB, 50 mA, 1.7 V, 20 W

VISHAY

场效应管, MOSFET, N沟道

LITTELFUSE

三端双向可控硅, 800 V, 35 mA, 16 W, 1.5 V, TO-220AB, 100 A