
INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V

INFINEON
单晶体管, IGBT, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3 引脚

INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V

STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.3 V, TO-220AB, 160 A

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V

WOLFSPEED
功率场效应管, MOSFET, N沟道, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V

INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 43.3 A, 650 V, 0.072 ohm, 10 V, 4 V

ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -200 V, 4 MHz, 250 W, -16 A, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 65 W, -5 A, 1000 hFE

INFINEON
单晶体管, IGBT, 55 A, 2.3 V, 200 W, 600 V, TO-247AC, 3 引脚