STMICROELECTRONICS

三端双向可控硅, 600 V, 5 mA, 1 W, 1.5 V, TO-220AB, 60 A

SOLID STATE

晶体管, NPN, TO-3

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V

MULTICOMP

单晶体管 双极, PNP, -80 V, 75 W, 8 A, 20000 hFE

SEMELAB

晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 250 V, 10 MHz, 40 W, 1 A, 10 hFE

INFINEON

晶体管, MOSFET, N沟道, 56 A, 250 V, 0.0145 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -250 V, 4 MHz, 200 W, -16 A, 8 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 58 A, 2.1 V, 195 W, 1.2 kV, TO-247AD, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚

VISHAY

晶闸管, 800 V, 15 mA, 6.5 A, 10 A, TO-220AB, 3 引脚

VISHAY

功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 3.5 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 50 V, 1.35 W, 3 A, 200 hFE

NTE ELECTRONICS

收发器芯片, NPN, 前置放大器驱动器

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 80V, TO-220-3

INFINEON

单晶体管, IGBT, 70 A, 1.79 V, 200 W, 600 V, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, 32 A, 1.55 V, 140 W, 600 V, TO-247AD, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 双NPN, 30 V, 625 mW, 1.2 A, 30000 hFE

MULTICOMP

单晶体管 双极, NPN, 80 V, 2 MHz, 200 W, 20 A, 40 hFE

NTE ELECTRONICS

单晶体管 双极, NPN, 250 V, 4 MHz, 250 W, 16 A, 15 hFE

STMICROELECTRONICS

三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 120 A

INFINEON

单晶体管, IGBT, 80 A, 1.35 V, 282 W, 650 V, TO-247, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V