IXYS RF

晶体管, 射频FET, 500 V, 16 A, 590 W, 100 MHz, DE-275

ALLEGRO SANKEN

单晶体管 双极, NPN, 160 V, 50 MHz, 130 W, 15 A, 50 hFE

LITTELFUSE

晶闸管, 600 V, 35 mA, 16 A, TO-220AB, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A

INFINEON

单晶体管, IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, NPN, 100 V, 75 W, 8 A, 20000 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V

VISHAY

功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V

RENESAS

单晶体管, IGBT, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 引脚

LITTELFUSE

可控硅晶闸管, 3.8A, 400V, TO-220AB

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 40 A, 1200 V, 348 W, 1.2 kV, TO-3PN, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 170 A, 75 V, 4.1 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 33 A, 250 V, 94 mohm, 10 V, 5 V

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR

单晶体管 双极, 通用, P沟道, 100 V, 2 MHz, 200 W, 30 A, 100 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 160 A, 2.6 V, 250 W, 600 V, TO-264, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V

MULTICOMP

单晶体管 双极, PNP, -60 V, 800 mW, 1 A, 40 hFE