STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V

INFINEON

单晶体管, IGBT, 通用, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚

VISHAY

晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V

WOLFSPEED

功率场效应管, MOSFET, N沟道, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V

INFINEON

晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, 74 A, -55 V, 20 mohm, -10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 46 A, 250 V, 0.038 ohm, 10 V, 5 V

VISHAY

晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, 100 V, 65 W, 8 A, 750 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 40 V, 2 mohm, 10 V, 2.3 V

STMICROELECTRONICS

双极晶体管

INFINEON

晶体管, MOSFET, N沟道, 95 A, 60 V, 0.0049 ohm, 10 V, 3.7 V

NTE ELECTRONICS

双向晶闸管

INFINEON

晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 55A

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V

NTE ELECTRONICS

可控硅, 600V V(DRM), 8A I(T)

STMICROELECTRONICS

双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP

MULTICOMP

单晶体管 双极, 通用, PNP, -60 V, 2.5 MHz, 90 W, 15 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 250 V, 30 MHz, 150 W, 17 A, 80 hFE

SOLID STATE

双极性晶体管, NPN, 50V, 2A, TO-39

MULTICOMP

单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -500 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.14 ohm, 10 V, 3 V