LITTELFUSE

晶闸管, 400 V, 15 mA, 3.8 A, 6 A, TO-263, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 260 V, 30 MHz, 200 W, 15 A, 175 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V

SOLID STATE

晶闸管, -30 V, 5 mA, 175 mA, 175 mA, TO-92, 3 引脚

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V

INFINEON

单晶体管, IGBT, 65 A, 1.6 V, 250 W, 600 V, TO-247AD, 3 引脚

STMICROELECTRONICS

双极晶体管阵列, 达林顿, NPN, 80 V, 4.3 W, 1.5 A, DIP

MULTICOMP

双极性晶体管, PNP, -80V, TO-3

IXYS RF

晶体管, 射频FET, 1 kV, 24 A, 1.8 kW, 30 MHz, DE-475

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 13A

INFINEON

单晶体管, IGBT, 95 A, 1.65 V, 330 W, 600 V, TO-247AC, 3 引脚

ON SEMICONDUCTOR

双极性晶体管, PNP, -200V

ROHM

晶体管, MOSFET, P沟道, -10 A, -20 V, 0.018 ohm, -4.5 V, -1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V

NTE ELECTRONICS

达林顿晶体管, NPN, 80V, TO-3

MICROCHIP

晶体管, MOSFET, N沟道, 175 mA, 300 V, 12 ohm, 0 V

VISHAY

晶体管, MOSFET, N沟道, 47 A, 500 V, 78 mohm, 10 V, 5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 28A

STMICROELECTRONICS

晶体管, IGBT, TO247

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.055 ohm, 10 V, 3.2 V

VISHAY

放大器, JFET, N沟道

MULTICOMP

双极性晶体管, NPN, 12V

VISHAY

晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V

ON SEMICONDUCTOR

单晶体管, IGBT, 50 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚