规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, 射频FET, 35 V, 625 mW, TO-92
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0103 ohm, 10 V, 4.8 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 25 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 0.035 ohm, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 8 mA, 20 mA, -6 V, SOT-23, RF FET
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 10 kohm
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 3 MHz, 15 W, 3 A, 10 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0065 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 10 mohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 1 mA, 5 mA, -3 V, SOT-23, JFET
(EN)DIODES INC.
单晶体管 双极, NPN, 50 V, 125 MHz, 1.2 W, 5 A, 350 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0018 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 75 MHz, 1 W, 3 A, 25 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 13.1 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 3 mohm, 10 V, 1.2 V
(EN)
