规格：MSL MSL 1 -无限制,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 100 V, 145 MHz, 1.5 W, 10 A, 25 hFE
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 120 MHz, 200 mW, 800 mA, 160 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -600 mA, 50 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0069 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 100 V, 500 mA, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 75 MHz, 2 W, -3 A, 25 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, 5.1 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 250 mW, -600 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 12 A, 100 V, 0.08 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 50 V, 47 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
