规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 65 A, 30 V, 4.92 mohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14 A, 25 V, 0.0704 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, Dual NPN, 45 V, 100 MHz, 380 mW, 100 mA, 150 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 250 V, 0.9 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -4.2 A, -100 V, 0.55 ohm, -10 V, -1.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV
(EN)
DIODES INC.
单晶体管 双极, PNP, 60 V, 150 MHz, 350 mW, 1 A, 100 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 3.3 mohm, 10 V, 2.3 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOP
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 3700 μohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.221 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.012 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
